PhD for R&D CMOS Integration in Dresden

As a PhD candidate in R&D CMOS Integration , you will conduct advanced research on the development and optimization of ferroelectric HfO₂-based devices for next‑generation memory and AI applications. Core Research Topics Ferroelectric HfO₂ Devices (FeFET / FeCAP) Optimization of HfO₂ thin films for stable ferroelectric behavior and investigation of polarization switching, retention, endurance, and variability. Device-level physics analysis of ferroeletricity based CMOS embedded devices and in-m…